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IRF830ALPBF - Vishay

Description: MOSFETs N-Chan 500V 5.0 Amp

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IRF830ALPBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - I2PAK (TO-262) (HIGH VOLTAGE)
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3D Models
IRF830ALPBF - Vishay  - 3D model - Transistor Outline, Vertical - I2PAK (TO-262) (HIGH VOLTAGE)
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IRF830ALPBF Details

  • Manufacturer Part Number:

    IRF830ALPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-262AA

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.8

  • Avalanche Energy Rating (Eas):

    230 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    1.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    74 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF830ALPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF830ALPBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
  • The recommended gate drive voltage for the IRF830ALPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF830ALPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper gate drive and layout to minimize ringing and oscillations.
  • Handle the device with ESD-protective equipment, use an ESD-protective wrist strap, and ensure the device is stored in an ESD-protective package.

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IRF830ALPBF Overview

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Part Image IRF830ALPBF Vishay Siliconix

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