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IRF830PBF - Vishay

Description: Vishay IRF830PBF N-channel MOSFET Transistor, 4.5 A, 500 V, 3-Pin TO-220AB

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PCB Footprints
IRF830PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB (High Voltage)
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3D Models
IRF830PBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-220AB (High Voltage)
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IRF830PBF Details

  • Manufacturer Part Number:

    IRF830PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-220AB

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.8

  • Avalanche Energy Rating (Eas):

    280 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    4.5 A

  • Drain-source On Resistance-Max:

    1.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    75 W

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF830PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF830PBF is -55°C to 175°C.
  • To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
  • The maximum allowable voltage for the IRF830PBF is 500V, but it's recommended to operate within the specified maximum voltage rating of 400V to ensure reliability.
  • Handle the IRF830PBF with ESD-protective equipment, wear an ESD strap, and ensure the workspace is ESD-protected to prevent damage.
  • Store the IRF830PBF in a dry, cool place, away from direct sunlight, and in its original packaging or an ESD-protective bag.

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IRF830PBF Overview

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Part Image IRF830PBF International Rectifier

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Part Image IRF830 Samsung Semiconductor

Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF830 Intersil Corporation

Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF830 TT Electronics Resistors

Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF830 Microsemi Corporation (now Microchip)

Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220

For a full list of alternate parts for IRF830PBF, check out Findchips.com