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IRF8707PBF - Infineon

Description: Infineon IRF8707PBF N-channel MOSFET, 11 A, 30 V HEXFET, 8-Pin SOIC

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Symbol
IRF8707PBF - Infineon - PCB symbol
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PCB Footprints
IRF8707PBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - 8 Lead SOIC-ren1
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3D Models
IRF8707PBF - Infineon - 3D model - Small Outline Packages - 8 Lead SOIC-ren1
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IRF8707PBF Details

  • Manufacturer Part Number:

    IRF8707PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    53 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.0119 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    88 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF8707PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF8707PBF is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRF8707PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF8707PBF is suitable for high-frequency switching applications up to 1 MHz, but it's essential to consider the device's switching losses, gate drive requirements, and thermal management.
  • To protect the IRF8707PBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in anti-static packaging.

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IRF8707PBF Overview

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IRF8707PBF Alternates

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Part Image IRF8707GTRPBF International Rectifier

Power Field-Effect Transistor, 11A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Part Image IRF8707TRPBF International Rectifier

Power Field-Effect Transistor, 11A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Part Image IRF8707GTRPBF Infineon Technologies AG

Power Field-Effect Transistor, 11A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Part Image IRF8707PBF-1 Infineon Technologies AG

Power Field-Effect Transistor
Part Image IRF8707GPBF International Rectifier

Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
For a full list of alternate parts for IRF8707PBF, check out Findchips.com