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IRF9310TRPBF - Infineon

Description: IRF9310TRPBF P-Channel MOSFET, 20 A, 30 V HEXFET, 8-Pin SOIC Infineon

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IRF9310TRPBF Details

  • Manufacturer Part Number:

    IRF9310TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    630 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.0046 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    880 pF

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2.5 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF9310TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF9310TRPBF is -55°C to 175°C.
  • The IRF9310TRPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
  • The maximum current rating for the IRF9310TRPBF is 23A.
  • Yes, the IRF9310TRPBF is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
  • The IRF9310TRPBF comes in a TO-220AB package.

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IRF9310TRPBF Overview

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Part Image FDS6681Z Fairchild Semiconductor Corporation

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Part Image FDS6681Z Rochester Electronics LLC

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Part Image IRF9310PBF Infineon Technologies AG

Power Field-Effect Transistor, 20A I(D), 30V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF9310PBF-1 Infineon Technologies AG

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Part Image IRF9310TRPBF-1 Infineon Technologies AG

Power Field-Effect Transistor, 20A I(D), 30V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

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