Part Image

IRFB260NPBF - Infineon

Description: Infineon IRFB260NPBF N-channel MOSFET, 56 A, 200 V HEXFET, 3-Pin TO-220AB

Download IRFB260NPBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRFB260NPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO220AB_2
click to zoom
3D Models
IRFB260NPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO220AB_2
click to zoom

IRFB260NPBF Details

  • Manufacturer Part Number:

    IRFB260NPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    450 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    56 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    380 W

  • Pulsed Drain Current-Max (IDM):

    220 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFB260NPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFB260NPBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.
  • The recommended gate drive voltage for the IRFB260NPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFB260NPBF is suitable for high-frequency switching applications, but ensure that the device is operated within its specified switching frequency and duty cycle ratings.
  • Handle the device with ESD-protective equipment, use an ESD-protective wrist strap, and ensure the device is stored in an ESD-protective package.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRFB260NPBF Overview

Use the download button to access the IRFB260NPBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFB2, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFB260NPBF

Showing 0 results

IRFB260NPBF Alternates

Showing results

Image Part Number Model
Part Image IRFB260N Infineon Technologies AG

Power Field-Effect Transistor, 56A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRFB260NPBF International Rectifier

Power Field-Effect Transistor, 56A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB