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IRFD123PBF - Vishay

Description: VISHAY - IRFD123PBF - N CHANNEL MOSFET, 100V, 1.3A

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IRFD123PBF - Vishay PCB footprint - Dual-In-Line Packages - Dual-In-Line Packages - HVM DIP
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IRFD123PBF - Vishay  - 3D model - Dual-In-Line Packages - HVM DIP
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IRFD123PBF Details

  • Manufacturer Part Number:

    IRFD123PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    1.3 A

  • Drain-source On Resistance-Max:

    0.27 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDIP-T4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.3 W

  • Pulsed Drain Current-Max (IDM):

    10 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFD123PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFD123PBF is -55°C to 175°C.
  • Yes, the IRFD123PBF is a fast-switching MOSFET with a rise time of 10ns and a fall time of 12ns.
  • The maximum drain-source voltage rating for the IRFD123PBF is 200V.
  • Yes, the IRFD123PBF is suitable for high-frequency applications up to 1MHz due to its low gate charge and internal gate resistance.
  • Yes, the IRFD123PBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other logic-level signal.

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Part Image IRFD123PBF Vishay Siliconix

Power Field-Effect Transistor, 1.3A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET