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IRFD9110PBF - Vishay

Description: Vishay IRFD9110PBF P-channel MOSFET Transistor, 0.7 A, 100 V, 4-pin HVMDIP, HexDIP

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IRFD9110PBF - Vishay - PCB symbol
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PCB Footprints
IRFD9110PBF - Vishay PCB footprint - Dual-In-Line Packages - Dual-In-Line Packages - HVM DIP
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3D Models
IRFD9110PBF - Vishay - 3D model - Dual-In-Line Packages - HVM DIP
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IRFD9110PBF Details

  • Manufacturer Part Number:

    IRFD9110PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    140 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    0.7 A

  • Drain-source On Resistance-Max:

    1.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    1.3 W

  • Power Dissipation-Max (Abs):

    1.3 W

  • Pulsed Drain Current-Max (IDM):

    5.6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFD9110PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFD9110PBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management practices, such as providing adequate heat sinking and ensuring good airflow. Additionally, operate the device within its specified voltage and current ratings.
  • The recommended gate drive voltage for the IRFD9110PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFD9110PBF is suitable for switching applications due to its low RDS(on) and high switching speed. However, ensure that the device is operated within its specified voltage and current ratings, and follow proper switching frequency and duty cycle guidelines.
  • Handle the IRFD9110PBF with ESD-protective equipment, such as wrist straps and mats, and ensure that the device is stored in an ESD-protective package. Additionally, follow proper PCB design and layout guidelines to minimize ESD susceptibility.

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