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IRFD9120 - Vishay

Description: P-channel MOSFET,IRFD9120 1A 100V

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IRFD9120 - Vishay PCB footprint - Dual-In-Line Packages - Dual-In-Line Packages - IRFD9120
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IRFD9120 Details

  • Manufacturer Part Number:

    IRFD9120

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DIP

  • Package Description:

    HD-1, DIP-4

  • Pin Count:

    4

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    140 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    1 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDIP-T4

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    1.3 W

  • Pulsed Drain Current-Max (IDM):

    8 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFD9120 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFD9120 is not explicitly stated in the datasheet. However, it can be determined by consulting the SOA curves provided in the application notes or by contacting Vishay's technical support.
  • To ensure proper thermal management, the IRFD9120 should be mounted on a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be designed to dissipate the maximum expected power dissipation of the device. Additionally, the device's thermal pad should be soldered to the heat sink to ensure good thermal contact.
  • The recommended gate drive voltage for the IRFD9120 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It is recommended to consult the application notes or contact Vishay's technical support for more information.
  • Yes, the IRFD9120 is qualified to AEC-Q101 standards, making it suitable for use in high-reliability and automotive applications. However, it is recommended to consult the device's qualification report and to contact Vishay's technical support to ensure the device meets the specific requirements of the application.
  • To prevent parasitic turn-on or oscillation in the IRFD9120, it is recommended to use a gate resistor with a value between 10Ω and 100Ω, and to ensure that the gate drive voltage is properly terminated. Additionally, the device's layout and PCB design should be optimized to minimize parasitic inductance and capacitance.

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IRFD9120 Overview

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