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IRFHM3911TRPBF - Infineon

Description: Infineon IRFHM3911TRPBF N-channel MOSFET, 11 A, 100 V HEXFET, 8-Pin PQFN

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IRFHM3911TRPBF - Infineon PCB footprint - Other - Other - IRFHM3911TRPBF-1
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IRFHM3911TRPBF - Infineon  - 3D model - Other - IRFHM3911TRPBF-1
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IRFHM3911TRPBF Details

  • Manufacturer Part Number:

    IRFHM3911TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    41 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    3.2 A

  • Drain-source On Resistance-Max:

    0.115 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    13 pF

  • JESD-30 Code:

    S-PDSO-F8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    29 W

  • Pulsed Drain Current-Max (IDM):

    36 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFHM3911TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFHM3911TRPBF is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.
  • The recommended gate drive voltage for the IRFHM3911TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRFHM3911TRPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-shielding bag or tube.
  • The maximum allowable power dissipation for the IRFHM3911TRPBF is 150W, but this value can be derated based on the operating temperature and other factors.

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Part Image IRFHM3911PBF Infineon Technologies AG

Power Field-Effect Transistor, 3.2A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET