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IRFM120ATF - onsemi

Description: Lower Input Capacitance; Rugged Gate Oxide Technology; Improved Gate Charge; Avalanche Rugged Technology; Extended Safe Operating Area; Lower Leakage Current : 10 μA (Max.) @ VDS = 100 V; Lower rDS(on) : 0.155 Ω (Typ.)

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PCB Footprints
IRFM120ATF - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223 ST SUFFIX CASE 318E-04 ISSUE O
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3D Models
IRFM120ATF - onsemi  - 3D model - SOT223 (3-Pin) - SOT-223 ST SUFFIX CASE 318E-04 ISSUE O
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IRFM120ATF Details

  • Manufacturer Part Number:

    IRFM120ATF

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-223-4 / TO-261-4

  • Manufacturer Package Code:

    318H-01

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    123 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    2.3 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    250

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.4 W

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFM120ATF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFM120ATF is -55°C to 150°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be between 10V and 30V.
  • The recommended gate resistor value for the IRFM120ATF is between 10Ω and 100Ω, depending on the specific application and switching frequency.
  • To protect the IRFM120ATF from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage, and add a current sense resistor and a fuse or a current limiter to prevent overcurrent.
  • The maximum allowable power dissipation for the IRFM120ATF is 150W, but this can be increased with proper heat sinking and thermal management.

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IRFM120ATF Overview

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