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IRFM150 - Infineon

Description: Hexfet Transistor N-Channel Mosfet

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IRFM150 - Infineon - PCB symbol
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PCB Footprints
IRFM150 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-254AA_1
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3D Models
IRFM150 - Infineon - 3D model - Transistor Outline, Vertical - TO-254AA_1
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IRFM150 Details

  • Manufacturer Part Number:

    IRFM150

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.1

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    34 A

  • Drain-source On Resistance-Max:

    0.07 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-254AA

  • JESD-30 Code:

    R-MSFM-P3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    136 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFM150 Frequently Asked Questions (FAQs)

  • The IRFM150 can operate safely up to 150°C, but it's recommended to keep the junction temperature below 125°C for optimal performance and reliability.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. Additionally, applying a thin layer of thermal interface material (TIM) between the device and heat sink can improve heat transfer.
  • The recommended gate drive voltage for the IRFM150 is between 10V and 15V, with a maximum voltage of 20V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the IRFM150 is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching losses, gate charge, and thermal performance when designing the application.
  • To protect the IRFM150, it's recommended to use a combination of overvoltage protection (OVP) and overcurrent protection (OCP) circuits. These can be implemented using external components such as zener diodes, resistors, and fuses.

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IRFM150 Overview

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