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IRFP140NPBF - Infineon

Description: N-channel MOSFET,IRFP140N 33A 100V

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IRFP140NPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC 2
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IRFP140NPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-247AC 2
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IRFP140NPBF Details

  • Manufacturer Part Number:

    IRFP140NPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    300 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    33 A

  • Drain-source On Resistance-Max:

    0.052 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    94 W

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFP140NPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IRFP140NPBF is 175°C, as specified in the datasheet.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink using a thermal interface material.
  • The maximum current rating of the IRFP140NPBF is 22A, as specified in the datasheet. However, this rating is dependent on the device's operating conditions, such as temperature and voltage.
  • To protect the IRFP140NPBF from overvoltage, use a voltage clamp or a transient voltage suppressor (TVS) diode to limit the voltage across the device to its maximum rated value of 500V.
  • The recommended gate drive voltage for the IRFP140NPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

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Part Image IRFP140NPBF International Rectifier

Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Part Image IRFP140N Fairchild Semiconductor Corporation

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