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IRFPG50PBF - Vishay

Description: N-channel MOSFET,IRFPG50 6.1A 1000V

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PCB Footprints
IRFPG50PBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC (High-Voltage)
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3D Models
IRFPG50PBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-247AC (High-Voltage)
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IRFPG50PBF Details

  • Manufacturer Part Number:

    IRFPG50PBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247AC

  • Pin Count:

    3

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    800 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1000 V

  • Drain Current-Max (ID):

    6.1 A

  • Drain-source On Resistance-Max:

    2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    190 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFPG50PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFPG50PBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management practices, such as providing adequate heat sinking and ensuring good airflow. Additionally, operate the device within its specified voltage and current ratings.
  • The recommended gate drive voltage for the IRFPG50PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Handle the device by the body, not the leads, and use an anti-static wrist strap or mat. Store the device in an anti-static bag or container when not in use.
  • Yes, the IRFPG50PBF is suitable for switching regulator applications due to its low RDS(on) and high current handling capabilities.

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IRFPG50PBF Overview

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Part Image IRFPG50 Vishay Intertechnologies

Power Field-Effect Transistor, 6.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247