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IRFR220NPBF - Infineon

Description: N-Channel 200 V 5A (Tc) 43W (Tc) Surface Mount TO-252AA (DPAK)

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IRFR220NPBF - Infineon PCB footprint - Other - Other - D-Pak(TO-252AA)_2025
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IRFR220NPBF Details

  • Manufacturer Part Number:

    IRFR220NPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    46 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    43 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFR220NPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFR220NPBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.
  • The recommended gate drive voltage for the IRFR220NPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRFR220NPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout, decoupling, and thermal management to minimize losses and ensure reliability.
  • Handle the device with ESD-protective equipment, use an ESD-protected workstation, and follow proper handling and storage procedures to prevent ESD damage.

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IRFR220NPBF Overview

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Part Image IRFR220NTRPBF Infineon Technologies AG

Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR220NPBF International Rectifier

Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR220NTRRPBF International Rectifier

Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR220NTR International Rectifier

Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR220NTRRPBF Infineon Technologies AG

Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

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