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IRFR320TRPBF-BE3 - Vishay

Description: MOSFET N-CHANNEL 400V

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IRFR320TRPBF-BE3 - Vishay - PCB symbol
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PCB Footprints
IRFR320TRPBF-BE3 - Vishay PCB footprint - Other - Other - DPAK (TO-252)_2022-3
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3D Models
IRFR320TRPBF-BE3 - Vishay - 3D model - Other - DPAK (TO-252)_2022-3
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IRFR320TRPBF-BE3 Details

  • Manufacturer Part Number:

    IRFR320TRPBF-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.3

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    160 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    3.1 A

  • Drain-source On Resistance-Max:

    1.8 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    47 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    12 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFR320TRPBF-BE3 Frequently Asked Questions (FAQs)

  • The IRFR320TRPBF-BE3 has an operating temperature range of -55°C to 175°C, making it suitable for a wide range of applications.
  • To ensure safe operating area, you should consider the maximum voltage, current, and power dissipation ratings, as well as the thermal characteristics of the device. You can refer to the datasheet's SOA curves and thermal derating charts to ensure safe operation.
  • The recommended gate drive voltage for the IRFR320TRPBF-BE3 is between 4.5V and 10V, with a typical value of 5V. This ensures reliable switching and minimizes power losses.
  • The IRFR320TRPBF-BE3 has an integrated ESD protection diode, but it's still important to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-safe environment.
  • The maximum allowed voltage for the gate-source and gate-drain pins is ±20V, with a maximum gate-source voltage of ±15V for reliable operation.

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IRFR320TRPBF-BE3 Overview

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