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IRFR3710ZTRLPBF - Infineon

Description: MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC

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IRFR3710ZTRLPBF - Infineon PCB footprint - Other - Other - PG-TO252-3-901 | DPAK
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IRFR3710ZTRLPBF Details

  • Manufacturer Part Number:

    IRFR3710ZTRLPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    150 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    42 A

  • Drain-source On Resistance-Max:

    0.018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    140 W

  • Pulsed Drain Current-Max (IDM):

    220 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFR3710ZTRLPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFR3710ZTRLPBF is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRFR3710ZTRLPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRFR3710ZTRLPBF from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that the device is stored in a static-protective environment.
  • The maximum allowable power dissipation for the IRFR3710ZTRLPBF is 150W, but this value can be derated based on the operating temperature and other factors.

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IRFR3710ZTRLPBF Overview

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Part Image IRFR3710ZTRPBF Infineon Technologies AG

Power Field-Effect Transistor, 42A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR3710ZTRRPBF International Rectifier

Power Field-Effect Transistor, 42A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR3710ZPBF International Rectifier

Power Field-Effect Transistor, 42A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR3710Z International Rectifier

Power Field-Effect Transistor, 42A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRFR3710ZPBF Infineon Technologies AG

Power Field-Effect Transistor, 42A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

For a full list of alternate parts for IRFR3710ZTRLPBF, check out Findchips.com