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IRFS38N20DTRLP - Infineon

Description: Infineon IRFS38N20DTRLP N-channel MOSFET, 43 A, 200 V HEXFET, 3-Pin D2PAK

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IRFS38N20DTRLP Details

  • Manufacturer Part Number:

    IRFS38N20DTRLP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    460 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    43 A

  • Drain-source On Resistance-Max:

    0.054 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    180 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFS38N20DTRLP Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IRFS38N20DTRLP is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or a heat spreader. Use a thermal interface material (TIM) to fill any gaps between the device and the heat sink, and ensure the heat sink is properly mounted and secured.
  • The recommended gate drive voltage for the IRFS38N20DTRLP is between 10V and 15V. However, it's essential to consult the datasheet and application notes for specific gate drive requirements, as excessive gate voltage can damage the device.
  • Yes, the IRFS38N20DTRLP is suitable for high-frequency switching applications. However, it's crucial to consider the device's switching characteristics, such as rise and fall times, and ensure the device is properly driven and cooled to prevent overheating and excessive losses.
  • To protect the IRFS38N20DTRLP from overvoltage and overcurrent, use a suitable voltage regulator and current limiter in your design. Additionally, consider implementing overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device.

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IRFS38N20DTRLP Overview

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Part Image IRFS38N20D Infineon Technologies AG

Power Field-Effect Transistor, 44A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRFS38N20DTRRPBF International Rectifier

Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRFS38N20DTRLP International Rectifier

Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRFS38N20DPBF Infineon Technologies AG

Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRFS38N20DTRR International Rectifier

Power Field-Effect Transistor, 44A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

For a full list of alternate parts for IRFS38N20DTRLP, check out Findchips.com