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IRFU430APBF - Vishay

Description: Vishay Siliconix IRFU430APBF N-channel MOSFET Transistor, 5 A, 500 V, 3-Pin IPAK

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PCB Footprints
IRFU430APBF - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-251AA _2021
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3D Models
IRFU430APBF - Vishay  - 3D model - Transistor Outline, Vertical - TO-251AA _2021
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IRFU430APBF Details

  • Manufacturer Part Number:

    IRFU430APBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.8

  • Avalanche Energy Rating (Eas):

    130 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    1.7 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFU430APBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFU430APBF is -55°C to 175°C.
  • Yes, the IRFU430APBF is RoHS (Restriction of Hazardous Substances) compliant, meaning it meets the European Union's directive on the restriction of certain hazardous substances in electrical and electronic equipment.
  • The typical turn-on time for the IRFU430APBF is around 10-20 ns, depending on the specific application and operating conditions.
  • Yes, the IRFU430APBF is suitable for high-frequency applications up to 1 MHz, making it a good choice for switching power supplies, DC-DC converters, and other high-frequency circuits.
  • The maximum allowed voltage for the IRFU430APBF is 500 V, making it suitable for high-voltage applications.

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IRFU430APBF Overview

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Image Part Number Model
Part Image IRFU430APBF Vishay Siliconix

Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

Part Image IRFU430A International Rectifier

Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Part Image IRFU430A Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRFU430A Vishay Intertechnologies

Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Part Image IRFU430A Samsung Semiconductor

Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

For a full list of alternate parts for IRFU430APBF, check out Findchips.com