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IRFU9024N - Infineon

Description: MOSFET P-CH 55V 11A IPAK

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IRFU9024N - Infineon  - 3D model
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IRFU9024N Details

  • Manufacturer Part Number:

    IRFU9024N

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.1

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    62 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    11 A

  • Drain-source On Resistance-Max:

    0.175 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    44 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFU9024N Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFU9024N is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to ensure proper thermal management, such as using a heat sink or thermal interface material.
  • The maximum current rating for the IRFU9024N is 90A, but it's essential to consider the device's thermal limitations and ensure proper cooling to prevent overheating.
  • To protect the IRFU9024N, it's recommended to use overvoltage protection (OVP) and overcurrent protection (OCP) circuits, and to ensure that the device is operated within its recommended specifications.
  • It's essential to follow the recommended PCB layout and design guidelines, such as using a solid ground plane, minimizing trace lengths, and ensuring proper decoupling and filtering to minimize electromagnetic interference (EMI).

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IRFU9024N Overview

Use the download button to access the IRFU9024N 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFU9, or try a keyword search, such as Power Field-Effect Transistors

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Part Image IRFU9024NPBF Infineon Technologies AG

Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Part Image IRFU9024NPBF International Rectifier

Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Part Image IRFU9024N International Rectifier

Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Part Image AUIRFU9024N International Rectifier

Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA