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IRFY9130M - TT Electronics Resistors

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Part Image IRFY9130M TT Electronics Power and Hybrid / Semelab Limited

Power Field-Effect Transistor, 11.2A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

Part Image IRFY9130M-QR-B TT Electronics Resistors

Power Field-Effect Transistor, 11.2A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB

Part Image IRFY9130M International Rectifier

Power Field-Effect Transistor, 11.2A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA