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IRG4BC20KDPBF - Infineon

Description: Infineon IRG4BC20KDPBF IGBT, 16 A 600 V, 3-Pin TO-220AB

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Symbol
IRG4BC20KDPBF - Infineon - PCB symbol
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PCB Footprints
IRG4BC20KDPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB 3pin
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3D Models
IRG4BC20KDPBF - Infineon - 3D model - Transistor Outline, Vertical - TO-220AB 3pin
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IRG4BC20KDPBF Details

  • Manufacturer Part Number:

    IRG4BC20KDPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    16 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    110 ns

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    60 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    MOTOR CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    380 ns

  • Turn-on Time-Nom (ton):

    88 ns

IRG4BC20KDPBF Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IRG4BC20KDPBF is 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.
  • The recommended gate resistance for the IRG4BC20KDPBF is between 10 ohms and 100 ohms to ensure proper switching performance and minimize electromagnetic interference (EMI).
  • Yes, you can use multiple IRG4BC20KDPBF devices in parallel to increase current handling, but ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.
  • To protect the IRG4BC20KDPBF, use overvoltage protection devices such as transient voltage suppressors (TVS) and overcurrent protection devices such as fuses or current sensors.

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IRG4BC20KDPBF Overview

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