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IRG4BC30U - Infineon

Description: Insulated Gate Bipolar Transistor

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IRG4BC30U - Infineon - PCB symbol
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PCB Footprints
IRG4BC30U - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IRG4BC30U
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IRG4BC30U - Infineon - 3D model - Transistor Outline, Vertical - IRG4BC30U
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IRG4BC30U Details

  • Manufacturer Part Number:

    IRG4BC30U

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    ULTRA FAST SWITCHING

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    23 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    320 ns

  • Turn-on Time-Nom (ton):

    33 ns

IRG4BC30U Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the IRG4BC30U is 150°C. However, it's recommended to operate the device within a junction temperature range of 25°C to 125°C for optimal performance and reliability.
  • Proper cooling of the IRG4BC30U is crucial to prevent overheating. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1°C/W. Also, make sure to follow the recommended mounting and thermal management guidelines provided in the datasheet.
  • The recommended gate drive voltage for the IRG4BC30U is between 10V and 15V. However, the device can tolerate gate drive voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.
  • Yes, the IRG4BC30U is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, thermal management, and layout parasitics when designing the application. Also, ensure the device is operated within its recommended operating conditions to prevent overheating and damage.
  • To protect the IRG4BC30U from overvoltage and overcurrent, use a suitable voltage clamp or surge protector to limit the voltage across the device. Also, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Ensure the protection circuitry is designed to respond quickly to fault conditions to prevent damage to the device.

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IRG4BC30U Overview

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IRG4BC30U Alternates

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Part Image IRG4BC30UPBF Infineon Technologies AG

Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-220AB