Part Image

IRG4PC50U - Infineon

Description: IGBT 600 V 55 A 200 W Through Hole TO-247AC

Download IRG4PC50U Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRG4PC50U - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC
click to zoom
3D Models
IRG4PC50U - Infineon  - 3D model - Transistor Outline, Vertical - TO-247AC
click to zoom

IRG4PC50U Details

  • Manufacturer Part Number:

    IRG4PC50U

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    ULTRA FAST SPEED

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    55 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    350 ns

  • Turn-on Time-Nom (ton):

    54 ns

IRG4PC50U Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the IRG4PC50U is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1.5°C/W is recommended. Additionally, ensure good airflow around the heat sink and avoid blocking the airflow with other components.
  • The recommended gate resistance for the IRG4PC50U is between 10 ohms and 100 ohms. A lower gate resistance can lead to oscillations, while a higher resistance can result in slower switching times.
  • Yes, the IRG4PC50U is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the gate drive circuit is designed to handle the high-frequency switching and that the power losses are within the device's ratings.
  • To protect the IRG4PC50U from overvoltage and overcurrent, use a voltage clamp circuit and a current sense resistor. Additionally, consider using a fuse or a circuit breaker to protect against overcurrent conditions.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRG4PC50U Overview

Use the download button to access the IRG4PC50U schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRG4P, or try a keyword search, such as IGBTs

Parts related to IRG4PC50U

Showing 0 results

IRG4PC50U Alternates

Showing results

Image Part Number Model
Part Image IRG4PC50UPBF International Rectifier

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC

Part Image IRG4PC50UPBF Infineon Technologies AG

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC