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IRG4PF50W - Infineon

Description: IGBT,IRG4PF50W 51A TO247, Insulated Gate Bipoler transistor

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PCB Footprints
IRG4PF50W - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC_2026
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IRG4PF50W Details

  • Manufacturer Part Number:

    IRG4PF50W

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    51 A

  • Collector-Emitter Voltage-Max:

    900 V

  • Configuration:

    SINGLE

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    370 ns

  • Turn-on Time-Nom (ton):

    54 ns

IRG4PF50W Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the IRG4PF50W is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • Proper cooling of the IRG4PF50W is crucial to prevent overheating. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1°C/W. Also, make sure to follow the recommended PCB layout and thermal design guidelines provided in the datasheet.
  • The recommended gate drive voltage for the IRG4PF50W is between 10V and 15V. However, the device can tolerate gate drive voltages up to 20V, but this may affect the switching performance and reliability.
  • Yes, the IRG4PF50W is suitable for high-frequency switching applications up to 100 kHz. However, the device's switching performance and losses will increase with frequency, so it's essential to carefully evaluate the device's performance and thermal management in your specific application.
  • To protect the IRG4PF50W from overvoltage and overcurrent, use a suitable voltage clamp or surge protector, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Also, ensure that the device is operated within its recommended operating conditions and follow the guidelines provided in the datasheet.

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Part Image IRG4PF50WPBF Infineon Technologies AG

Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC