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IRG4PF50WPBF - Infineon

Description: Transistor IGBT N-Ch 900V 51A TO247AC Infineon IRG4PF50WPBF, IGBT Transistor, 51 A 900 V, 3-Pin TO-247AC

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Symbol
IRG4PF50WPBF - Infineon - PCB symbol
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PCB Footprints
IRG4PF50WPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC_1
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3D Models
IRG4PF50WPBF - Infineon - 3D model - Transistor Outline, Vertical - TO-247AC_1
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IRG4PF50WPBF Details

  • Manufacturer Part Number:

    IRG4PF50WPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    51 A

  • Collector-Emitter Voltage-Max:

    900 V

  • Configuration:

    SINGLE

  • Fall Time-Max (tf):

    220 ns

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    200 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN OVER NICKEL

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    370 ns

  • Turn-on Time-Nom (ton):

    54 ns

IRG4PF50WPBF Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the IRG4PF50WPBF can withstand is 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a suitable thermal interface material, and ensuring good airflow around the device.
  • The recommended gate resistor value for the IRG4PF50WPBF is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
  • Yes, the IRG4PF50WPBF is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal management, and layout considerations to ensure reliable operation.
  • To protect the IRG4PF50WPBF from ESD, it's essential to follow proper handling and storage procedures, such as using ESD-safe materials, grounding oneself before handling the device, and using ESD protection devices in the circuit.

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IRG4PF50WPBF Overview

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IRG4PF50WPBF Alternates

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Insulated Gate Bipolar Transistor, 51A I(C), 900V V(BR)CES, N-Channel, TO-247AC