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IRG4PH30KPBF - Infineon

Description: Trans IGBT Chip N-CH 1200V 20A 100000mW 3-Pin(3+Tab) TO-247AC Tube

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IRG4PH30KPBF Details

  • Manufacturer Part Number:

    IRG4PH30KPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    20 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE

  • Fall Time-Max (tf):

    170 ns

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN OVER NICKEL

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    MOTOR CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    640 ns

  • Turn-on Time-Nom (ton):

    53 ns

IRG4PH30KPBF Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the IRG4PH30KPBF can withstand is 175°C.
  • To ensure reliability, it is recommended to follow the recommended operating conditions, use a suitable heat sink, and ensure proper thermal management.
  • The recommended gate resistance for the IRG4PH30KPBF is between 10 ohms and 100 ohms.
  • Yes, the IRG4PH30KPBF is suitable for high-frequency applications up to 100 kHz, but it's recommended to consult the datasheet and application notes for specific guidance.
  • To protect the IRG4PH30KPBF from ESD, it is recommended to follow proper handling and storage procedures, use ESD-protective packaging, and implement ESD protection circuits in the design.

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IRG4PH30KPBF Overview

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Part Image IRG4PH30KPBF International Rectifier

Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AC