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IRG4PH40UD2-EP - Infineon

Description: IGBT 1200V 41A TO-247AD

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IRG4PH40UD2-EP Details

  • Manufacturer Part Number:

    IRG4PH40UD2-EP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Collector Current-Max (IC):

    41 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    300 ns

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    160 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN OVER NICKEL

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    600 ns

  • Turn-on Time-Nom (ton):

    46 ns

IRG4PH40UD2-EP Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IRG4PH40UD2-EP is 150°C.
  • Yes, the IRG4PH40UD2-EP can be used in a parallel configuration, but it requires careful consideration of the thermal and electrical characteristics of the modules.
  • The recommended gate resistance for the IRG4PH40UD2-EP is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • To ensure the reliability of the IRG4PH40UD2-EP in high-temperature applications, it is essential to follow the recommended thermal management guidelines, including proper heat sink design and thermal interface material selection.
  • Yes, the IRG4PH40UD2-EP can be used in a resonant converter topology, but it requires careful consideration of the resonant circuit design and the IGBT's switching characteristics.

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IRG4PH40UD2-EP Overview

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Part Image IRG4PH40UD2-EP International Rectifier

Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AD