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IRG4PH40UPBF - Infineon

Description: IGBT, 1200V, 30A, TO-247AC

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Symbol
IRG4PH40UPBF - Infineon - PCB symbol
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PCB Footprints
IRG4PH40UPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IRG4PH40UPBF*
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3D Models
IRG4PH40UPBF - Infineon - 3D model - Transistor Outline, Vertical - IRG4PH40UPBF*
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IRG4PH40UPBF Details

  • Manufacturer Part Number:

    IRG4PH40UPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    41 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE

  • Fall Time-Max (tf):

    190 ns

  • Gate-Emitter Thr Voltage-Max:

    3 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    160 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN OVER NICKEL

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    690 ns

  • Turn-on Time-Nom (ton):

    49 ns

IRG4PH40UPBF Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the IRG4PH40UPBF can withstand is 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The recommended gate resistance for the IRG4PH40UPBF is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the IRG4PH40UPBF is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal management, and layout considerations to ensure reliable operation.
  • To protect the IRG4PH40UPBF from ESD, it's essential to follow proper handling and storage procedures, such as using ESD-safe materials, grounding straps, and ionizers, and ensuring that the device is properly packaged and stored.

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IRG4PH40UPBF Overview

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IRG4PH40UPBF Alternates

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Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, TO-247AC