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IRG4PH50UPBF - Infineon

Description: International Rectifier IRG4PH50UPBF, IGBT Transistor, 45 A 1200 V, 3-Pin TO-247AC

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Symbol
IRG4PH50UPBF - Infineon - PCB symbol
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PCB Footprints
IRG4PH50UPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC-2
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3D Models
IRG4PH50UPBF - Infineon - 3D model - Transistor Outline, Vertical - TO-247AC-2
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IRG4PH50UPBF Details

  • Manufacturer Part Number:

    IRG4PH50UPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    45 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE

  • Fall Time-Max (tf):

    500 ns

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    200 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN OVER NICKEL

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    600 ns

  • Turn-on Time-Nom (ton):

    49 ns

IRG4PH50UPBF Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IRG4PH50UPBF is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
  • To ensure proper cooling, make sure to attach a heat sink to the device, and apply a thermal interface material (TIM) to fill any gaps between the device and heat sink. Also, ensure good airflow around the heat sink.
  • The recommended gate resistance for the IRG4PH50UPBF is between 10 ohms and 100 ohms. A lower gate resistance can help reduce switching losses, but may also increase the risk of oscillations.
  • Yes, the IRG4PH50UPBF is suitable for high-frequency switching applications up to 100 kHz. However, be aware that high-frequency operation can increase switching losses and reduce the device's overall efficiency.
  • To protect the IRG4PH50UPBF from overvoltage and overcurrent, use a voltage clamp or a surge protector to limit the voltage across the device. Also, consider adding overcurrent protection using a fuse or a current-sensing resistor.

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IRG4PH50UPBF Overview

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