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IRGP35B60PDPBF - Infineon

Description: IGBT Transistors

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IRGP35B60PDPBF - Infineon - PCB symbol
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PCB Footprints
IRGP35B60PDPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3-Pin TO-247AC25
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3D Models
IRGP35B60PDPBF - Infineon - 3D model - Transistor Outline, Vertical - 3-Pin TO-247AC25
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IRGP35B60PDPBF Details

  • Manufacturer Part Number:

    IRGP35B60PDPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    HIGH RELIABILITY, LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    16 ns

  • Gate-Emitter Thr Voltage-Max:

    5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    308 W

  • Qualification Status:

    Not Qualified

  • Rise Time-Max (tr):

    11 ns

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN OVER NICKEL

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    142 ns

  • Turn-on Time-Nom (ton):

    34 ns

IRGP35B60PDPBF Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IRGP35B60PDPBF is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of less than 1°C/W. Additionally, ensure good thermal contact between the device and the heat sink, and consider using a thermal interface material if necessary.
  • The recommended gate drive voltage for the IRGP35B60PDPBF is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the IRGP35B60PDPBF is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, thermal performance, and layout parasitics to ensure reliable operation.
  • To protect the IRGP35B60PDPBF from overvoltage and overcurrent, consider using a voltage clamp or a surge protector to limit the voltage across the device. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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IRGP35B60PDPBF Overview

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Part Image IRGP35B60PD Infineon Technologies AG

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