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IRGP50B60PD1-EP - Infineon

Description: IRGP50B60 - Discrete IGBT with Anti-Parallel Diode

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IRGP50B60PD1-EP - Infineon - PCB symbol
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PCB Footprints
IRGP50B60PD1-EP - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AD
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3D Models
IRGP50B60PD1-EP - Infineon - 3D model - Transistor Outline, Vertical - TO-247AD
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IRGP50B60PD1-EP Details

  • Manufacturer Part Number:

    IRGP50B60PD1-EP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    LEAD FREE PACKAGE-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    HIGH RELIABILITY

  • Collector Current-Max (IC):

    75 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    20 ns

  • Gate-Emitter Thr Voltage-Max:

    5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    390 W

  • Qualification Status:

    Not Qualified

  • Rise Time-Max (tr):

    20 ns

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    161 ns

  • Turn-on Time-Nom (ton):

    39 ns

IRGP50B60PD1-EP Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IRGP50B60PD1-EP is 150°C, as specified in the datasheet. However, it's recommended to operate the module at a temperature below 125°C for optimal performance and reliability.
  • To ensure proper thermal management, it's essential to provide a good thermal interface between the module and the heat sink. Apply a thin layer of thermal interface material, and ensure the heat sink is properly mounted and secured. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistance for the IRGP50B60PD1-EP is between 10 ohms and 20 ohms. This value helps to prevent oscillations and ensures stable operation of the IGBT.
  • Yes, the IRGP50B60PD1-EP can be used in a parallel configuration, but it's essential to ensure that the modules are properly matched and synchronized to prevent uneven current sharing. Additionally, the gate drive circuitry should be designed to accommodate the parallel configuration.
  • The maximum allowable voltage transient for the IRGP50B60PD1-EP is 120% of the maximum rated voltage, which is 600V. However, it's recommended to limit voltage transients to 10% of the maximum rated voltage to ensure reliable operation.

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IRGP50B60PD1-EP Overview

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