Please enter a minimum 3 letters or numbers
Technical Content
Part Image

IRGPS60B120KDP - Infineon

Description: IGBT 1200V 105A 595W SUPER247

Download IRGPS60B120KDP Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
IRGPS60B120KDP - Infineon - PCB symbol
click to zoom
PCB Footprints
IRGPS60B120KDP - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - Super-247
click to zoom
3D Models
IRGPS60B120KDP - Infineon - 3D model - Transistor Outline, Vertical - Super-247
click to zoom

IRGPS60B120KDP Details

  • Manufacturer Part Number:

    IRGPS60B120KDP

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    105 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    58 ns

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-274AA

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    595 W

  • Qualification Status:

    Not Qualified

  • Rise Time-Max (tr):

    45 ns

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    MOTOR CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    411 ns

  • Turn-on Time-Nom (ton):

    104 ns

IRGPS60B120KDP Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the IRGPS60B120KDP is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a temperature below 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's exposed pad, and ensure the heat sink is securely fastened to the device. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the IRGPS60B120KDP depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 ohms and 22 ohms is suitable for most applications. However, it's recommended to consult the application note or contact Infineon's technical support for specific guidance.
  • Yes, the IRGPS60B120KDP can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are properly matched, and the gate signals are synchronized to prevent uneven current sharing. Consult the application note or contact Infineon's technical support for guidance on parallel configuration.
  • The recommended dead time for the IRGPS60B120KDP depends on the specific application and switching frequency. As a general guideline, a dead time of 100-200 ns is suitable for most applications. However, it's recommended to consult the application note or contact Infineon's technical support for specific guidance.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRGPS60B120KDP Overview

Use the download button to access the IRGPS60B120KDP schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRGPS, or try a keyword search, such as IGBTs

Parts related to IRGPS60B120KDP

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

IRGPS60B120KDP Alternates

Showing results

Image Part Number Model
Part Image IRGPS60B120KDPPBF Infineon Technologies AG

Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, TO-274AA
Part Image IRGPS60B120KD International Rectifier

Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, TO-274AA
Part Image IRGPS60B120KDPPBF International Rectifier

Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, TO-274AA
Part Image IRGPS60B120KD Infineon Technologies AG

Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, TO-274AA
Part Image IRGPS60B120KDPBF International Rectifier

Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel
For a full list of alternate parts for IRGPS60B120KDP, check out Findchips.com