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IRHM7450SESCS - Infineon

Description: RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)

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PCB Footprints
IRHM7450SESCS - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-254AA
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3D Models
IRHM7450SESCS - Infineon  - 3D model - Transistor Outline, Vertical - TO-254AA
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IRHM7450SESCS Details

  • Manufacturer Part Number:

    IRHM7450SESCS

  • Part Life Cycle Code:

    Active

  • Package Description:

    HERMETIC SEALED, TO-254AA, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    500 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.57 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-254AA

  • JESD-30 Code:

    S-MSFM-P3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    METAL

  • Package Shape:

    SQUARE

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Surface Mount:

    NO

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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IRHM7450SESCS Overview

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