IRHNA593160 - Infineon

IRHNA593160 Details

• Manufacturer Part Number:

  IRHNA593160

• Part Life Cycle Code:

  Active

• ECCN Code:

  EAR99

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  4.39

• Avalanche Energy Rating (Eas):

  440 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  100 V

• Drain Current-Max (ID):

  52 A

• Drain-source On Resistance-Max:

  0.049 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JESD-30 Code:

  R-CBCC-N3

• JESD-609 Code:

  e0

• Number of Elements:

  1

• Number of Terminals:

  3

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Package Body Material:

  CERAMIC, METAL-SEALED COFIRED

• Package Shape:

  RECTANGULAR

• Package Style:

  CHIP CARRIER

• Polarity/Channel Type:

  P-CHANNEL

• Power Dissipation-Max (Abs):

  300 W

• Pulsed Drain Current-Max (IDM):

  208 A

• Qualification Status:

  Not Qualified

• Surface Mount:

  YES

• Terminal Finish:

  Tin/Lead (Sn/Pb)

• Terminal Form:

  NO LEAD

• Terminal Position:

  BOTTOM

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON