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IRL640PBF-BE3 - Vishay

Description: MOSFET 200V N-CH HEXFET

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Symbol
IRL640PBF-BE3 - Vishay - PCB symbol
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PCB Footprints
IRL640PBF-BE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1
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3D Models
IRL640PBF-BE3 - Vishay - 3D model - Transistor Outline, Vertical - TO-220-1
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IRL640PBF-BE3 Details

  • Manufacturer Part Number:

    IRL640PBF-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Israel

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    580 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.18 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    120 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    68 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRL640PBF-BE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IRL640PBF-BE3 is a standard SO-8 package with a minimum pad size of 1.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To handle thermal management, ensure good thermal conductivity between the device and the PCB, use a thermal pad or heat sink, and keep the ambient temperature within the recommended operating range.
  • The maximum allowed voltage on the gate pin of IRL640PBF-BE3 is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation.
  • Yes, IRL640PBF-BE3 is suitable for high-frequency switching applications up to 1MHz, but ensure proper PCB layout, decoupling, and gate drive to minimize switching losses and ringing.
  • Handle IRL640PBF-BE3 with ESD-safe materials, use an ESD wrist strap or mat, and ensure the PCB has ESD protection components, such as TVS diodes or resistors, to prevent damage from static electricity.

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IRL640PBF-BE3 Overview

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