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IRLB3036PBF - Infineon

Description: MOSFET N-Channel 60V 270A HEXFET TO220AB International Rectifier IRLB3036PBF N-channel MOSFET Transistor, 270 A, 60 V, 3-Pin TO-220AB

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Symbol
IRLB3036PBF - Infineon - PCB symbol
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PCB Footprints
IRLB3036PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB_1-ren1
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3D Models
IRLB3036PBF - Infineon - 3D model - Transistor Outline, Vertical - TO-220AB_1-ren1
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IRLB3036PBF Details

  • Manufacturer Part Number:

    IRLB3036PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.1

  • Avalanche Energy Rating (Eas):

    290 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    195 A

  • Drain-source On Resistance-Max:

    0.0024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    380 W

  • Pulsed Drain Current-Max (IDM):

    1100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLB3036PBF Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the IRLB3036PBF can withstand is 175°C.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate drive voltage for the IRLB3036PBF is between 10V and 15V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the IRLB3036PBF is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching losses, gate drive requirements, and thermal management when designing the application.
  • To protect the IRLB3036PBF from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse to detect and respond to overcurrent conditions.

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IRLB3036PBF Overview

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IRLB3036PBF Alternates

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Image Part Number Model
Part Image IRLB3036PBF International Rectifier

Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Image IRLB3036GPBF International Rectifier

Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB