FDD86102 Model Download Search Results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	FDD86102 onsemi	1	High power and current handling capability in a widely used surface mount package ; High performance trench technology for extremely low rDS(on) ; 100% UIL tested ; RoHS Compliant ; Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8 A ; Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A ; Very low Qg and Qgd compared to competing trench technologies; Fast switching speed	Other	FDD86102	3D model available Symbol and footprint available 3	1 Download Model
	FDD86102 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 8A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FDD86102	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDD86102LZ Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 8A I(D), 100V, 0.0225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FDD86102LZ	3D model not available Symbol and footprint not available 0	0 Build or Request
	FDD86102LZ onsemi	1	Power Field-Effect Transistor, 8A I(D), 100V, 0.0225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252		FDD86102LZ	3D model not available Symbol and footprint not available 0	0 Build or Request

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