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IRLL014TRPBF - Vishay

Description: N channel ;VBRDSS 60 V; RDSon 200 mOhm

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PCB Footprints
IRLL014TRPBF - Vishay PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223 (HIGH VOLTAGE)
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3D Models
IRLL014TRPBF - Vishay  - 3D model - SOT223 (3-Pin) - SOT-223 (HIGH VOLTAGE)
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IRLL014TRPBF Details

  • Manufacturer Part Number:

    IRLL014TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-223, 4 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    30 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    2.7 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    42 pF

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    3.1 W

  • Pulsed Drain Current-Max (IDM):

    22 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLL014TRPBF Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IRLL014TRPBF is a standard SOT23 package footprint with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure reliable operation of IRLL014TRPBF in high-temperature environments, it is recommended to derate the power dissipation according to the temperature derating curve provided in the datasheet, and to ensure good thermal conduction to a heat sink or PCB.
  • The maximum allowed voltage on the gate of IRLL014TRPBF is ±20V, but it is recommended to limit the gate voltage to ±15V to ensure reliable operation and to prevent damage to the device.
  • Yes, IRLL014TRPBF can be used in high-frequency switching applications up to 100kHz, but it is recommended to evaluate the device's performance and ensure that it meets the specific application requirements.
  • To protect IRLL014TRPBF from electrostatic discharge (ESD), it is recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat, and to ensure that the PCB and components are properly grounded.

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IRLL014TRPBF Overview

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Part Image SIHLL014 Vishay Siliconix

Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image SIHLL014TR-GE3 Vishay Siliconix

Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRLL014TRPBF International Rectifier

Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRLL014 International Rectifier

Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRLL014 Vishay Siliconix

Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

For a full list of alternate parts for IRLL014TRPBF, check out Findchips.com