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IRLR110TRPBF - Vishay

Description: VISHAY - IRLR110TRPBF - Power MOSFET, N Channel, 100 V, 4.3 A, 0.54 ohm, TO-252AA, Surface Mount

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IRLR110TRPBF - Vishay PCB footprint - Other - Other - IRLR110TRPBF
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IRLR110TRPBF Details

  • Manufacturer Part Number:

    IRLR110TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    4.3 A

  • Drain-source On Resistance-Max:

    0.54 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Pulsed Drain Current-Max (IDM):

    19 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLR110TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLR110TRPBF is -55°C to 150°C.
  • The IRLR110TRPBF is a logic-level MOSFET, which means it can be driven directly from a microcontroller or other low-voltage logic source.
  • The maximum current rating for the IRLR110TRPBF is 110A.
  • The IRLR110TRPBF is a surface-mount device (SMD) in a TO-220AB package.
  • The typical turn-on time for the IRLR110TRPBF is 10ns, and the typical turn-off time is 20ns.

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IRLR110TRPBF Overview

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Part Image IRLR110TRPBF Vishay Siliconix

Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IRLR110TRLPBF Vishay Siliconix

Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IRLR110TRRPBF International Rectifier

Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRLR110 Samsung Semiconductor

Power Field-Effect Transistor, 4A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRLR110TR International Rectifier

Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

For a full list of alternate parts for IRLR110TRPBF, check out Findchips.com