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IRLR3915 - Infineon

Description: 55V Single N-Channel IR MOSFET in a D-Pak package, 14mΩ, 30A, -55°C to +175°C

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IRLR3915 - Infineon PCB footprint - Other - Other - PG-TO252-3-901 | DPAK_2025
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IRLR3915 Details

  • Manufacturer Part Number:

    IRLR3915

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    200 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e0

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    240 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLR3915 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IRLR3915 is 150°C. However, it's recommended to operate it at a lower temperature to ensure reliability and longevity.
  • Proper thermal management is crucial for the IRLR3915. Ensure good heat dissipation by using a heat sink, thermal interface material, and a PCB design that allows for good airflow. Also, follow the recommended thermal resistance values in the datasheet.
  • The recommended gate drive voltage for the IRLR3915 is between 10V and 15V. However, it's essential to ensure that the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the IRLR3915 is suitable for high-frequency switching applications up to 1MHz. However, it's essential to consider the device's switching losses, gate drive requirements, and thermal management when designing the application.
  • To protect the IRLR3915 from overvoltage and overcurrent conditions, use a suitable voltage regulator, overvoltage protection (OVP) circuit, and overcurrent protection (OCP) circuit. Also, ensure that the device is operated within its specified ratings.

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IRLR3915 Overview

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