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IRLR8256PBF - Infineon

Description: MOSFET N-CH 25V 81A DPAK

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IRLR8256PBF - Infineon PCB footprint - Other - Other - IRLR8256PBF-1
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IRLR8256PBF - Infineon  - 3D model - Other - IRLR8256PBF-1
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IRLR8256PBF Details

  • Manufacturer Part Number:

    IRLR8256PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    86 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    81 A

  • Drain-source On Resistance-Max:

    0.0057 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    63 W

  • Pulsed Drain Current-Max (IDM):

    325 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN OVER NICKEL

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLR8256PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLR8256PBF is -55°C to 150°C.
  • Yes, the IRLR8256PBF is compatible with lead-free soldering and is RoHS-compliant.
  • The recommended PCB footprint for the IRLR8256PBF is a 5x6mm pad with a 0.5mm pitch, as shown in the Infineon application note AN2013-01.
  • Yes, the IRLR8256PBF is designed for high-reliability applications and meets the requirements of AEC-Q101, making it suitable for automotive and industrial applications.
  • The maximum allowable power dissipation for the IRLR8256PBF is 2.5W, assuming a maximum junction temperature of 150°C.

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IRLR8256PBF Overview

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IRLR8256PBF Alternates

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Image Part Number Model
Part Image IRLR8256PBF International Rectifier

Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRLR8256 International Rectifier

Power Field-Effect Transistor, TO-252AA

Part Image IRLR8256TRRPBF International Rectifier

Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRLR8256TRPBF International Rectifier

Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Part Image IRLR8256 Infineon Technologies AG

Power Field-Effect Transistor, TO-252AA

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