Part Image

IRLZ24NSTRLPBF - Infineon

Description: MOSFET MOSFT 55V 18A 60mOhm 10nC Log Lvl

Download IRLZ24NSTRLPBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRLZ24NSTRLPBF - Infineon PCB footprint - Other - Other - IRLZ24NSTRLPBF-1
click to zoom

IRLZ24NSTRLPBF Details

  • Manufacturer Part Number:

    IRLZ24NSTRLPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    D2PAK-3/2

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    68 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    61 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    3.8 W

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    72 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLZ24NSTRLPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRLZ24NSTRLPBF is -55°C to 175°C.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V and a gate current (Ig) of at least 10mA.
  • For optimal performance, use a PCB layout with a low-inductance path for the drain and source pins, and keep the gate pin as close as possible to the driver circuit.
  • Yes, the IRLZ24NSTRLPBF is suitable for high-frequency switching applications up to 1MHz, but ensure proper PCB layout and decoupling to minimize ringing and EMI.
  • Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage, and consider adding a current sense resistor and a fuse to protect against overcurrent.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRLZ24NSTRLPBF Overview

Use the download button to access the IRLZ24NSTRLPBF schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like IRLZ2, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRLZ24NSTRLPBF

Showing 0 results

IRLZ24NSTRLPBF Alternates

Showing results

Image Part Number Model
Part Image IRLZ24NSPBF International Rectifier

Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRLZ24NS International Rectifier

Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRLZ24NSPBF Infineon Technologies AG

Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRLZ24NSTRRPBF Infineon Technologies AG

Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET