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IRLZ44N - Infineon

Description: MOSFET MOSFET, 55V, 41A, 22 mOhm, 32 nC Qg, Logic Level, TO-220AB

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IRLZ44N - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IRLZ44N-1
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IRLZ44N - Infineon  - 3D model - Transistor Outline, Vertical - IRLZ44N-1
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IRLZ44N Details

  • Manufacturer Part Number:

    IRLZ44N

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    41 A

  • Drain-source On Resistance-Max:

    0.022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    83 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRLZ44N Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) of the IRLZ44N is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.
  • To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material (TIM) between the device and the heat sink, and ensuring that the heat sink is properly attached to the PCB. Additionally, the PCB should be designed to dissipate heat efficiently, and the device should be placed in a location that allows for good airflow.
  • The recommended gate drive voltage for the IRLZ44N is typically between 10V to 15V, depending on the specific application and switching frequency. However, it's essential to ensure that the gate drive voltage is within the specified maximum rating of 20V to avoid damaging the device.
  • To protect the IRLZ44N from electrostatic discharge (ESD), it's essential to handle the device with care and follow proper ESD handling procedures. This includes using ESD-safe packaging, handling the device with ESD-safe tools, and ensuring that the device is properly grounded during assembly and testing.
  • The maximum allowed voltage spike on the drain-source voltage (Vds) of the IRLZ44N is typically around 1.5 to 2 times the maximum rated Vds, depending on the specific application and operating conditions. However, it's essential to ensure that the voltage spike is within the specified maximum rating of 55V to avoid damaging the device.

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IRLZ44N Overview

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Part Image IRLZ44NPBF International Rectifier

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