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ISS55EP06LMXTSA1 - Infineon

Description: MOSFET OptiMOSTMSmallSignalTransistor,-60V

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PCB Footprints
ISS55EP06LMXTSA1 - Infineon PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT-23--ren1
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3D Models
ISS55EP06LMXTSA1 - Infineon  - 3D model - SOT23 (3-Pin) - SOT-23--ren1
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ISS55EP06LMXTSA1 Details

  • Manufacturer Part Number:

    ISS55EP06LMXTSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOT-23, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    TR, 7 INCH : 3000

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.16 A

  • Drain-source On Resistance-Max:

    5.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1.2 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    0.4 W

  • Power Dissipation-Max (Abs):

    0.4 W

  • Reference Standard:

    IEC-61249-2-21

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

ISS55EP06LMXTSA1 Frequently Asked Questions (FAQs)

  • Infineon recommends a 2-layer or 4-layer PCB with a thermal via array under the device to ensure good thermal conductivity. A minimum of 5 thermal vias with a diameter of 0.3 mm is recommended.
  • To ensure reliable operation in high-temperature environments, it is recommended to derate the device's power dissipation according to the temperature derating curve provided in the datasheet. Additionally, ensure good thermal design and heat sinking to keep the junction temperature below 150°C.
  • Infineon recommends a soldering profile with a peak temperature of 260°C, a dwell time above liquidus of 30-60 seconds, and a cooling rate of 4°C/s. Refer to the datasheet for more detailed information.
  • Handle the device by the body, avoiding touching the pins or leads. Store the device in its original packaging or an equivalent ESD-protected container. Avoid exposing the device to moisture, direct sunlight, or extreme temperatures.
  • Handle the device in an ESD-protected environment, wear an ESD wrist strap or use an ESD mat, and use ESD-protected packaging and storage materials. Ensure that all equipment and tools used during handling and assembly are ESD-protected.

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ISS55EP06LMXTSA1 Overview

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