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IXA60IF1200NA - LITTELFUSE

Description: Trans IGBT Module N-CH 1200V

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IXA60IF1200NA Details

  • Manufacturer Part Number:

    IXA60IF1200NA

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    88 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    290 W

  • Reference Standard:

    IEC-60747; UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Finish:

    Nickel (Ni)

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    350 ns

  • Turn-on Time-Nom (ton):

    110 ns

  • VCEsat-Max:

    2.1 V

IXA60IF1200NA Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXA60IF1200NA is a 5-pin TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 5mm x 5mm.
  • To ensure proper cooling, a heat sink with a thermal resistance of 1°C/W or lower is recommended. The heat sink should be attached to the device using a thermal interface material with a thermal conductivity of 1 W/m-K or higher.
  • The maximum allowed voltage transient for the IXA60IF1200NA is 1200V for a duration of 10ms or less. Voltage transients exceeding this limit may damage the device.
  • Yes, the IXA60IF1200NA can be used in parallel for higher current applications, but it is essential to ensure that the devices are matched for current sharing and that the thermal management is adequate to prevent hotspots.
  • The recommended gate drive voltage for the IXA60IF1200NA is 15V, with a minimum of 10V and a maximum of 20V. A higher gate drive voltage may improve switching performance but may also increase power consumption.

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IXA60IF1200NA Overview

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Part Image IXA60IF1200NA IXYS Corporation

Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel