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IXBH2N250 - LITTELFUSE

Description: IGBT Transistors Disc IGBT BiMSFT-VeryHiVolt TO-247AD

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PCB Footprints
IXBH2N250 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (IXFH)
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3D Models
IXBH2N250 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247 (IXFH)
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IXBH2N250 Details

  • Manufacturer Part Number:

    IXBH2N250

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China, Philippines, South Korea

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    5 A

  • Collector-Emitter Voltage-Max:

    2500 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    5.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    32 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    252 ns

  • Turn-on Time-Nom (ton):

    310 ns

  • VCEsat-Max:

    3.8 V

IXBH2N250 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXBH2N250 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXBH2N250 is rated for operation up to 150°C junction temperature, but it's recommended to derate the power dissipation at higher temperatures to ensure reliable operation.
  • To ensure reliability, follow proper PCB design and layout guidelines, use a suitable thermal interface material, and ensure that the device is operated within its recommended operating conditions.
  • Yes, IXBH2N250 can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and that the PCB design can handle the increased current.
  • The recommended gate drive voltage for IXBH2N250 is 10-15V, but it can be operated with a gate drive voltage as low as 5V, depending on the specific application requirements.

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