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IXBH9N160G - LITTELFUSE

Description: Trans IGBT Chip N-CH 1600V 9A 100000mW 3-Pin(3+Tab) TO-247AD

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IXBH9N160G - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 HEIGHT 5.21
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3D Models
IXBH9N160G - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247 HEIGHT 5.21
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IXBH9N160G Details

  • Manufacturer Part Number:

    IXBH9N160G

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    3

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    9 A

  • Collector-Emitter Voltage-Max:

    1600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    5.5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    100 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    190 ns

  • Turn-on Time-Nom (ton):

    340 ns

  • VCEsat-Max:

    7 V

IXBH9N160G Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXBH9N160G is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm. It's recommended to follow the manufacturer's recommended land pattern to ensure proper thermal performance and reliability.
  • To ensure optimal thermal performance, ensure good thermal contact between the device and the heat sink, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and design the PCB to allow for good airflow around the device.
  • The maximum allowed voltage transient for IXBH9N160G is 1.5 times the rated voltage (160V) for a duration of up to 100ms. Exceeding this limit may damage the device.
  • Yes, IXBH9N160G is suitable for high-reliability applications. It's manufactured using a high-reliability process and is screened to ensure a low defect rate. However, it's essential to follow proper design and manufacturing practices to ensure the device operates within its specifications.
  • To prevent electrostatic discharge (ESD) damage, handle the device by the body or use an ESD wrist strap or mat. Ensure the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays, to protect the device from ESD events.

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IXBH9N160G Overview

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Part Image IXBH9N160 Littelfuse Inc

Insulated Gate Bipolar Transistor, 9A I(C), 1600V V(BR)CES, N-Channel, TO-247AD