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- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IXFN38N100P
- Part Number IXFN38N100P
- Manufacturer LITTELFUSE
- Last Modified Date Aug 2, 2021 10:22 PM UTC
- Pinout / Pin List Click Here (Member Only)
IXFN38N100P Details
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Manufacturer Part Number:
IXFN38N100P
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Manufacturer:
Littelfuse Inc
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YTEOL:
6
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Additional Feature:
AVALANCHE RATED
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Avalanche Energy Rating (Eas):
2000 mJ
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Case Connection:
ISOLATED
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
1000 V
IXFN38N100P Frequently Asked Questions (FAQs)
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The recommended PCB footprint for IXFN38N100P is a standard TO-220 package with a minimum pad size of 70 mil x 70 mil and a thermal pad size of 100 mil x 100 mil.
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While IXFN38N100P is a fast-switching MOSFET, it's not optimized for high-frequency switching applications above 100 kHz. For high-frequency applications, consider using a MOSFET with a lower gate charge and output capacitance.
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To ensure reliability in high-temperature environments, follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and derating the device's power handling according to the datasheet's thermal derating curve.
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Yes, you can parallel multiple IXFN38N100P devices to increase current handling, but ensure that each device has its own gate resistor and that the gate signals are properly synchronized to prevent shoot-through currents.
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The recommended gate drive voltage for IXFN38N100P is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can reduce switching losses, but may also increase gate charge and oscillations.
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IXFN38N100P Overview
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