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IXFX64N60P - LITTELFUSE

Description: Trans MOSFET N-CH 600V 64A 3-Pin(3+Tab) PLUS 247

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IXFX64N60P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PLUS 247TM Outline
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3D Models
IXFX64N60P - LITTELFUSE  - 3D model - Transistor Outline, Vertical - PLUS 247TM Outline
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IXFX64N60P Details

  • Manufacturer Part Number:

    IXFX64N60P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    64 A

  • Drain-source On Resistance-Max:

    0.096 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN SILVER COPPER

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFX64N60P Frequently Asked Questions (FAQs)

  • The thermal resistance of the IXFX64N60P is typically around 0.5°C/W (junction-to-case) and 1.5°C/W (junction-to-ambient) at a maximum junction temperature of 150°C.
  • Yes, the IXFX64N60P is suitable for high-frequency switching applications up to 100 kHz due to its low switching losses and fast recovery time.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below the maximum rated value.
  • The recommended gate drive voltage for the IXFX64N60P is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V.
  • Yes, the IXFX64N60P can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.

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IXFX64N60P Overview

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