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IXGH30N120B3D1 - LITTELFUSE

Description: IGBTs 60 Amps 1200V Through Hole

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IXGH30N120B3D1 - LITTELFUSE  - 3D model
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IXGH30N120B3D1 Details

  • Manufacturer Part Number:

    IXGH30N120B3D1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    30 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    380 ns

  • Gate-Emitter Thr Voltage-Max:

    5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    580 ns

  • Turn-off Time-Nom (toff):

    331 ns

  • Turn-on Time-Nom (ton):

    53 ns

  • VCEsat-Max:

    3.5 V

IXGH30N120B3D1 Frequently Asked Questions (FAQs)

  • The recommended gate resistor value is typically between 10 ohms to 20 ohms, depending on the specific application and switching frequency. However, it's recommended to consult the application note or contact Littelfuse support for more specific guidance.
  • Proper thermal management is crucial for the reliability and performance of the IGBT module. Ensure good thermal contact between the module and the heat sink, use a suitable thermal interface material, and maintain a maximum junction temperature (Tj) below 150°C. Consult the datasheet and application notes for more detailed guidance.
  • The maximum allowable voltage transient for the IXGH30N120B3D1 is typically around 1.5 to 2 times the rated voltage (1200V) for a short duration (e.g., 1-2 microseconds). However, it's recommended to consult the datasheet and application notes for more specific guidance, as excessive voltage transients can damage the device.
  • Yes, the IXGH30N120B3D1 can be used in a parallel configuration, but it's essential to ensure that the modules are properly matched, and the gate drive and control circuits are designed to handle the parallel configuration. Consult the application notes and Littelfuse support for more detailed guidance.
  • The recommended dead-time for the IXGH30N120B3D1 is typically around 1-2 microseconds, depending on the specific application and switching frequency. However, it's recommended to consult the application notes and Littelfuse support for more specific guidance, as excessive dead-time can affect the performance and efficiency of the system.

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IXGH30N120B3D1 Overview

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